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Time LOG
| Date | Description | Comments |
|---|---|---|
| 05/02/2016 | Pictures | Documentation of crystal's conditions as it arrived at CUA. |
| 05/02/2016 | Thermal annealing | Ramp up at 18oC/hour up to 200oC. Stays for 10 hours and ramp down at 18oC/hour. |
| 05/19/2016 | Transverse Transmittance | At the center of the crystal, every nm from 200nm until 800nm. Sample: 1360 |
| 05/20/2016 | Transverse Transmittance Scan | Wavelengths: 360nm, 420nm, 620nm. Sampling period: 0.6s, moving motor at 2mm/s. |
| 05/24/2016 | Light Yield | Run 3219: crystal wrapped with ~5 layers of teflon tape and 2 layers of black electrical tape. Steps of 20min, 1cm. T=18°C. LY = 12.86 ± 0.655 pe/MeV. |
| 07/08/2016 | Longitudinal Transmittance Scan | Wavelengths: 200-800 nm. Sampling period: 0.6s, moving motor at 2mm/s. |
| 07/26/2016 | Light Yield | Run: 3260. 3 layers of teflon tape, 1 layer of electrical tape. ~50,000 incidents. Light Yield: 14.11797596 pe/MeV |
| 07/27/16 | Light Yield | 3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius. 200ns gatewidth->1000ns gatewidth.
200ns: 3382, 300ns:3379, 400ns:3375, 500ns:3377, 600ns:3296, 700ns:3373, 800ns:3372, 900ns:3371, 1000ns:3367 |
| 01/05/17 | Irradiation X-ray | 160 kV, 6mA, 15min |
Pictures at 04/29/2016
Light Yield
Light Yield Gate Width
|
File:J44-100-900 gw.png 07/27/2016 |
