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**SICCA J44**
Date	Description	Comments
05/02/2016	Pictures	Documentation of crystal's conditions as it arrived at CUA.
05/02/2016	Thermal annealing	Ramp up at 18oC/hour up to 200oC. Stays for 10 hours and ramp down at 18oC/hour.
05/19/2016	Transverse Transmittance	At the center of the crystal, every nm from 200nm until 800nm. Sample: 1360
05/20/2016	Transverse Transmittance Scan	Wavelengths: 360nm, 420nm, 620nm. Sampling period: 0.6s, moving motor at 2mm/s.
05/24/2016	Light Yield	Run 3219: crystal wrapped with ~5 layers of teflon tape and 2 layers of black electrical tape. Steps of 20min, 1cm. T=18°C. LY = 12.86 ± 0.655 pe/MeV.
07/08/2016	Longitudinal Transmittance Scan	Wavelengths: 200-800 nm. Sampling period: 0.6s, moving motor at 2mm/s.
07/26/2016	Light Yield	Run: 3260. 3 layers of teflon tape, 1 layer of electrical tape. ~50,000 incidents. Light Yield: 14.11797596 pe/MeV
07/27/16	Light Yield	3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius. 200ns gatewidth->1000ns gatewidth. 200ns: 3382, 300ns:3379, 400ns:3375, 500ns:3377, 600ns:3296, 700ns:3373, 800ns:3372, 900ns:3371, 1000ns:3367
01/05/17	Irradiation X-ray	160 kV, 6mA, 15min

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07/25/2016

07/27/2016

@@ Line 34: / Line 34: @@
 |07/27/16 || Light Yield || 3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius. 200ns gatewidth->1000ns gatewidth.
 ns: 3382, 300ns:3379, 400ns:3375, 500ns:3377, 600ns:3296, 700ns:3373, 800ns:3372, 900ns:3371, 1000ns:3367
+|-
+|01/05/17 || Irradiation X-ray || 160 kV, 6mA, 15min
 |}