Difference between revisions of "MainPage:Nuclear:NPS:PWO:CrystalLOG:SICCAJ37"
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|07/27/16 || Light Yield || 3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius. 200ns gatewidth->1000ns gatewidth. | |07/27/16 || Light Yield || 3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius. 200ns gatewidth->1000ns gatewidth. | ||
200ns: 3292, 300ns:3293, 400ns:3294, 500ns:3276, 600ns:3296, 700ns:3297, 800ns:3298, 900ns:3299, 1000ns:3289 | 200ns: 3292, 300ns:3293, 400ns:3294, 500ns:3276, 600ns:3296, 700ns:3297, 800ns:3298, 900ns:3299, 1000ns:3289 | ||
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| + | | 08/11/16 || Light Yield || Run: 3408. 3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius. LY:9.47 | ||
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[[File:J37-100nsgw.png|thumb|left|340px| 07/25/2016]] | [[File:J37-100nsgw.png|thumb|left|340px| 07/25/2016]] | ||
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| + | [[File:J37-100nsgwREDO.png|thumb|left|340px| 07/25/2016]] | ||
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Revision as of 14:05, 11 August 2016
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Time LOG
| Date | Description | Comments |
|---|---|---|
| 05/02/2016 | Pictures | Documentation of crystal's conditions as it arrived at CUA. |
| 05/02/2016 | Thermal annealing | Ramp up at 18°C/hour up to 200°C. Stays for 10 hours and ramp down at 18°C/hour. |
| 05/13/2016 | Light Yield | Run 3208: crystal wrapped with ~5 layers of teflon tape and 2 layers of black electrical tape. Steps of 20min, 1cm. T=18°C. LY = 15.1954 ± 0.798 pe/MeV. |
| 05/19/2016 | Transverse Transmittance | At the center of the crystal, every nm from 200nm until 800nm. Sample: 1359 |
| 05/20/2016 | Transverse Transmittance Scan | Wavelengths: 360nm, 420nm, 620nm. Sampling period: 0.6s, moving motor at 2mm/s. |
| 07/12/2016 | Longitudinal Transmittance Scan | Wavelengths: 200-800 nm. Sampling period: 0.6s, moving motor at 2mm/s. |
| 08/01/16 | Light Yield | Run: 3252. 3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius. Light Yield: 10.25710237 pe/MeV |
| 07/27/16 | Light Yield | 3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius. 200ns gatewidth->1000ns gatewidth.
200ns: 3292, 300ns:3293, 400ns:3294, 500ns:3276, 600ns:3296, 700ns:3297, 800ns:3298, 900ns:3299, 1000ns:3289 |
| 08/11/16 | Light Yield | Run: 3408. 3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius. LY:9.47 |
Pictures at 04/29/2016
Light Yield
Light Yield Gate Width
|
File:J37-100-900 gw.png 07/27/2016 |
