Difference between revisions of "MainPage:Nuclear:NPS:PWO:CrystalLOG:SICCAJ38"
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|07/25/16 || Light Yield || Run: 3302. 3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius. | |07/25/16 || Light Yield || Run: 3302. 3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius. | ||
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| − | |07/29/16 || Light Yield || 3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius. 200ns | + | |07/29/16 || Light Yield || 3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius. 200ns->1000ns gatewidth. |
200ns:3303, 300ns:3304, 400ns:3305, 500ns:3306, 600ns:3307, 700ns:3308, 800ns:3310, 900ns:3311 | 200ns:3303, 300ns:3304, 400ns:3305, 500ns:3306, 600ns:3307, 700ns:3308, 800ns:3310, 900ns:3311 | ||
|} | |} | ||
Revision as of 09:24, 11 August 2016
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Time LOG
| Date | Description | Comments |
|---|---|---|
| 05/02/2016 | Pictures | Documentation of crystal's conditions as it arrived at CUA. |
| 05/02/2016 | Thermal annealing | Ramp up at 18°C/hour up to 200°C. Stays for 10 hours and ramp down at 18°C/hour. |
| 05/14/2016 | Light Yield | Run 3209: crystal wrapped with ~5 layers of teflon tape and 2 layers of black electrical tape. Steps of 20min, 1cm. T=18°C. LY = 18.2825 ± 0.629 pe/MeV. |
| 05/19/2016 | Transverse Transmittance | At the center of the crystal, every nm from 200nm until 800nm. Sample: 1356 |
| 05/20/2016 | Transverse Transmittance Scan | Wavelengths: 360nm, 420nm, 620nm. Sampling period: 0.6s, moving motor at 2mm/s. |
| 07/07/2016 | Longitudinal Transmittance Scan | Wavelengths: 200-800 nm. Sampling period: 0.6s, moving motor at 2mm/s. |
| 07/25/16 | Light Yield | Run: 3302. 3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius. |
| 07/29/16 | Light Yield | 3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius. 200ns->1000ns gatewidth.
200ns:3303, 300ns:3304, 400ns:3305, 500ns:3306, 600ns:3307, 700ns:3308, 800ns:3310, 900ns:3311 |
