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**SICCA J38**
Date	Description	Comments
05/02/2016	Pictures	Documentation of crystal's conditions as it arrived at CUA.
05/02/2016	Thermal annealing	Ramp up at 18°C/hour up to 200°C. Stays for 10 hours and ramp down at 18°C/hour.
05/14/2016	Light Yield	Run 3209: crystal wrapped with ~5 layers of teflon tape and 2 layers of black electrical tape. Steps of 20min, 1cm. T=18°C. LY = 18.2825 ± 0.629 pe/MeV.
05/19/2016	Transverse Transmittance	At the center of the crystal, every nm from 200nm until 800nm. Sample: 1356
05/20/2016	Transverse Transmittance Scan	Wavelengths: 360nm, 420nm, 620nm. Sampling period: 0.6s, moving motor at 2mm/s.
07/07/2016	Longitudinal Transmittance Scan	Wavelengths: 200-800 nm. Sampling period: 0.6s, moving motor at 2mm/s.
07/25/16	Light Yield	Run: 3302. 3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius.
07/29/16	Light Yield	3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius. 200ns gatewidth->1000ns gatewidth. 200ns:3303, 300ns:3304, 400ns:3305, 500ns:3306, 600ns:3307, 700ns:3308, 800ns:3310, 900ns:3311

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@@ Line 30: / Line 30: @@
 | 07/07/2016 || Longitudinal Transmittance Scan || Wavelengths: 200-800 nm. Sampling period: 0.6s, moving motor at 2mm/s.
 |-
-|07/25/16 || Light Yield || Run: 3253. 3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius.
+|07/25/16 || Light Yield || Run: 3302. 3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius.
+|-
+|07/29/16 || Light Yield || 3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius. 200ns gatewidth->1000ns gatewidth.
+ns:3303, 300ns:3304, 400ns:3305, 500ns:3306, 600ns:3307, 700ns:3308, 800ns:3310, 900ns:3311
 |}